Click HERE for the spec sheet.
A reverse bias voltage (1.5 to 10 VDC) and a shunt rsisitor will greatly improve the frequency response of this photodiode. Active area is 11.3mm dia., spectral response is 350 to 1100nm.
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Out of stock
Like new, Silicon Photodiode made by Advanced Photonix Inc. Part number: SD 444-12-12-171 -
New factory package of 200 surface mount silicon phototransistors. Ideal for visible and near infrared (400 to 1100nm) light sensor circuits. The peak response is at 880nm. Factory spec sheet found HERE -
New thermoelectric Peltier module made by Laird Technologies model SH10,23,06,L. Ideal for cooling laser diodes, crystals, detectors, and more. Specifications: Voltage: 2.6 VDC max. Current: 3 Amps max. Heat Pump: 5 Watt max. (cold side) Input leads: 16 AWG, 115 mm long. Dimensions: 15 x 15 x 3.6 mm, 7 mm diameter hole in center. See this LINK for the complete specification sheet. -
New thermoelectric Peltier module made by Laird Technologies model CP10,63,08,L1. Ideal for cooling laser diodes, crystals, detectors, and more. Specifications: Voltage: 8 VDC max. Current: 3 Amps max. Heat Pump: 12 Watt max. (cold side) Input leads: 16 AWG, 150 mm long. Dimensions: 30 x 15 x 4 mm See this LINK for spec sheet. -
Voltage controlled variable optical attenuator. This is a used unit mfg. by Xerox for use with a linear polarized Helium Neon laser. The unit uses a electro-optic element and a stationary optic to variably attenuate the laser output power. A simple 0 to 3 VDC low current (less than 1mA) input is all that is needed to operate. The laser output can be fully attenuated at 0 volts or 3 volts depending on the light input plane of polarization and can produce an attenuation ratio of around 50:1. The assembly also has a beam splitter and a photodiode that taps a small amount of the attenuated light for use in a feedback loop circuit. The front optic is a cylindrical lens that can be removed if desired.